| PART |
Description |
Maker |
| SOM-5760 SOM-5760-S1A1E SOM-5760-S6A1E |
Intel? Atom SCH US15W XL COM-Express CPU Module
Intel? Atom?/a> SCH US15W XL COM-Express CPU Module
Intel垄莽 Atom垄芒 SCH US15W XL COM-Express CPU Module
|
Advantech Co., Ltd.
|
| BR3199 |
BR3199.SCH
|
ETC
|
| ADLS15HD ADLS15HD-16N ADLS15HD-11N |
Intel Atom Z5xx 1.1GHz - 1.6GHz, US15W SCH
|
Advanced Digital Logic, Inc.
|
| SOM-3560 SOM-3560FG-S1A1E |
Intel? Atom Processor SCH US15W Qseven CPU Module
|
Advantech Co., Ltd.
|
| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业
SENSOR IC 5CH 5V 5MA SGL 28-SSOP
Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存
Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|
| SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks
TaNFilm庐 High Temperature DIP and SIP Networks
TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| T2035H07 T2035H-6I-TR T2050H-6I-TR T2050H-6G-TR T2 |
600 V, 20 A, SNUBBERLESS TRIAC
High temperature 20 A Snubberless TRIACs
High temperature 20 A Snubberless⑩ TRIACs
|
STMicroelectronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AM2147-35PCB AM2147-70DC AM2147-70PC AM2147-70LC A |
Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
500mA Negative Low Dropout Micropower Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
x1 SRAM
500mA Negative Low Dropout Micropower Regulator; Package: DD PAK; No of Pins: 5; Temperature Range: 0°C to 70°C
100kHz, 5A, 2.5A and 1.25A High Efficiency Switching Regulators; Package: DD PAK; No of Pins: 5; Temperature Range: 0°C to 70°C
100kHz, 5A, 2.5A and 1.25A High Efficiency Switching Regulators; Package: PDIP; No of Pins: 8; Temperature Range: -40°C to 85°C
Dual and Quad 25MHz, 600V/µs Op Amps; Package: PDIP; No of Pins: 14; Temperature Range: 0°C to 70°C
Dual and Quad 50MHz, 800V/µs Op Amps; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
500kHz High Efficiency 6A Switching Regulator; Package: TO-220; No of Pins: 7; Temperature Range: -40°C to 85°C
Dual and Quad 70MHz, 1000V/µs Op Amps; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Dual and Quad Precision Rail-to-Rail Input and Output Op Amps; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C
Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Micropower DC/DC Converter Adjustable and Fixed 5V, 12V; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
500kHz and 1MHz High Efficiency 1.5A Switching Regulators; Package: SO; No of Pins: 8; Temperature Range: -40?°C to 85?°C
500kHz and 1MHz High Efficiency 1.5A Switching Regulators; Package: SO; No of Pins: 8; Temperature Range: -40?°C to 85?°C 射频放大
500mA Negative Low Dropout Micropower Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C x1的SRAM
|
Advanced Micro Devices, Inc.
Rochester Electronics, LLC
Molex, Inc.
|
